ISC0602NLSATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-TDSON-8
$1.79
Available to order
Reference Price (USD)
1+
$1.79000
500+
$1.7721
1000+
$1.7542
1500+
$1.7363
2000+
$1.7184
2500+
$1.7005
Exquisite packaging
Discount
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Enhance your circuit performance with ISC0602NLSATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust ISC0602NLSATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 29µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-6
- Package / Case: 8-PowerTDFN
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