DMTH4004LPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V 100A PWRDI5060-8
$0.66
Available to order
Reference Price (USD)
1+
$0.66451
500+
$0.6578649
1000+
$0.6512198
1500+
$0.6445747
2000+
$0.6379296
2500+
$0.6312845
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMTH4004LPSQ-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMTH4004LPSQ-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.83W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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