IRLS3813TRLPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 160A D2PAK
$3.47
Available to order
Reference Price (USD)
800+
$1.49468
1,600+
$1.37170
2,400+
$1.27710
5,600+
$1.22980
Exquisite packaging
Discount
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Boost your electronic applications with IRLS3813TRLPBF, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRLS3813TRLPBF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.95mOhm @ 148A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 195W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263AB)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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