NDS352P
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET P-CH 20V 850MA SUPERSOT3
$0.28
Available to order
Reference Price (USD)
1+
$0.28000
500+
$0.2772
1000+
$0.2744
1500+
$0.2716
2000+
$0.2688
2500+
$0.266
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover NDS352P, a versatile Transistors - FETs, MOSFETs - Single solution from Fairchild Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IRLB4030PBF
Infineon Technologies
IPI80N04S404AKSA1
Rohm Semiconductor
RQ5C025TPTL
Diodes Incorporated
DMP3013SFV-7
Microchip Technology
VN3205N3-G-P002
Diodes Incorporated
DMT6013LSS-13
Fairchild Semiconductor
FCP25N60N
Infineon Technologies
SPP80N03S2L04AKSA1
Infineon Technologies
IRFR2405TRPBF
Infineon Technologies