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IRLMS2002TRPBF

Infineon Technologies
IRLMS2002TRPBF Preview
Infineon Technologies
MOSFET N-CH 20V 6.5A MICRO6
$0.83
Available to order
Reference Price (USD)
3,000+
$0.24132
6,000+
$0.22468
15,000+
$0.21636
30,000+
$0.21182
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6™(SOT23-6)
  • Package / Case: SOT-23-6

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