G3R160MT12J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 22A TO263-7
$7.69
Available to order
Reference Price (USD)
1+
$7.69000
500+
$7.6131
1000+
$7.5362
1500+
$7.4593
2000+
$7.3824
2500+
$7.3055
Exquisite packaging
Discount
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Optimize your electronic systems with G3R160MT12J, a high-quality Transistors - FETs, MOSFETs - Single from GeneSiC Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, G3R160MT12J provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 2.69V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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