IRLD110PBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 1A 4DIP
$1.80
Available to order
Reference Price (USD)
1+
$1.07000
10+
$0.95100
100+
$0.75160
500+
$0.58290
1,000+
$0.46019
2,500+
$0.42951
5,000+
$0.40803
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IRLD110PBF, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRLD110PBF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-HVMDIP
- Package / Case: 4-DIP (0.300", 7.62mm)
Related Products
Panjit International Inc.
PJQ4466AP-AU_R2_000A1
NXP USA Inc.
BUK7226-75A118
Fairchild Semiconductor
FDP7042L
IXYS
IXTA200N055T2
Microchip Technology
APT8052BFLLG
IXYS
IXTH24N50L
STMicroelectronics
STP28N65M2
Alpha & Omega Semiconductor Inc.
AON6262E
onsemi
FDP18N50
IXYS