IRL40S212ARMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK
$1.80
Available to order
Reference Price (USD)
1+
$1.79520
500+
$1.777248
1000+
$1.759296
1500+
$1.741344
2000+
$1.723392
2500+
$1.70544
Exquisite packaging
Discount
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Experience the power of IRL40S212ARMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IRL40S212ARMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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