HUF76137S3S
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$1.79
Available to order
Reference Price (USD)
1+
$1.79000
500+
$1.7721
1000+
$1.7542
1500+
$1.7363
2000+
$1.7184
2500+
$1.7005
Exquisite packaging
Discount
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Experience the power of HUF76137S3S, a premium Transistors - FETs, MOSFETs - Single from Harris Corporation. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, HUF76137S3S is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 145W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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