IRG8CH106K10F
Infineon Technologies
Infineon Technologies
IGBT 1200V 110A DIE
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Optimize power control with IRG8CH106K10F Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IRG8CH106K10F meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 110A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 700 nC
- Td (on/off) @ 25°C: 80ns/380ns
- Test Condition: 600V, 110A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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