IXGM40N60
IXYS
IXYS
POWER MOSFET TO-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXGM40N60 Single IGBT by IXYS sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with IXYS for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Power - Max: 250 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 250 nC
- Td (on/off) @ 25°C: 100ns/600ns
- Test Condition: 480V, 40A, 22Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-204AE
Related Products
Harris Corporation
HGTP3N60B3R4724
Infineon Technologies
IRGC4274B
Littelfuse Inc.
NGD8201TH
Harris Corporation
HGTP10N40E1
Infineon Technologies
IRGC30B60KB
Infineon Technologies
IRGC15B60KD
Infineon Technologies
IRG7CH73UED-R
onsemi
NCG100F475NF120
Harris Corporation
HGTH20N40C1D
Littelfuse Inc.