IRFSL3107PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 75V 195A TO262
$2.54
Available to order
Reference Price (USD)
1,000+
$2.31000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IRFSL3107PBF by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRFSL3107PBF ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Panjit International Inc.
PJD12P06_L2_00001
Diodes Incorporated
DMN3021LFDF-7
STMicroelectronics
STF7N52K3
onsemi
FDMT80060DC
Alpha & Omega Semiconductor Inc.
AOD256
STMicroelectronics
STB80NF55-06T4
Vishay Siliconix
SQ4184EY-T1_GE3
Panjit International Inc.
PJA3403_R1_00001
Vishay Siliconix
SIHW30N60E-GE3
Infineon Technologies