IXKR40N60C
IXYS
IXYS
MOSFET N-CH 600V 38A ISOPLUS247
$25.86
Available to order
Reference Price (USD)
1+
$17.58000
30+
$14.78167
120+
$13.58300
510+
$11.58551
Exquisite packaging
Discount
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IXYS presents IXKR40N60C, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXKR40N60C delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
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