IRFP4110PBFXKMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO247-3
$5.62
Available to order
Reference Price (USD)
1+
$5.62000
500+
$5.5638
1000+
$5.5076
1500+
$5.4514
2000+
$5.3952
2500+
$5.339
Exquisite packaging
Discount
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Boost your electronic applications with IRFP4110PBFXKMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRFP4110PBFXKMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 370W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
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