FCMT080N65S3
onsemi
onsemi
MOSFET N-CH 650V 38A 4TDFN
$3.71
Available to order
Reference Price (USD)
1+
$3.71011
500+
$3.6730089
1000+
$3.6359078
1500+
$3.5988067
2000+
$3.5617056
2500+
$3.5246045
Exquisite packaging
Discount
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Discover high-performance FCMT080N65S3 from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FCMT080N65S3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 880µA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2765 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-TDFN (8x8)
- Package / Case: 4-PowerTSFN
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