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IRFIB5N65APBF

Vishay Siliconix
IRFIB5N65APBF Preview
Vishay Siliconix
MOSFET N-CH 650V 5.1A TO220-3
$4.58
Available to order
Reference Price (USD)
1+
$4.18000
50+
$3.35780
100+
$3.05940
500+
$2.47734
1,000+
$2.08932
2,500+
$1.98485
5,000+
$1.91023
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 930mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab

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