IRFI644GPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 250V 7.9A TO220-3
$3.09
Available to order
Reference Price (USD)
1+
$2.76000
50+
$2.23900
100+
$2.02300
500+
$1.59084
1,000+
$1.33159
2,500+
$1.24518
5,000+
$1.20197
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IRFI644GPBF, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
Rohm Semiconductor
R6507ENJTL
Infineon Technologies
IPN80R600P7ATMA1
onsemi
NTD4865N-35G
Alpha & Omega Semiconductor Inc.
AOD538
Goford Semiconductor
G26P04K
Infineon Technologies
IPB016N06L3GATMA1
EPC
EPC8010
onsemi
NTD4815NHT4G
NTE Electronics, Inc
NTE2388
Vishay Siliconix