IRFF223
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$1.07
Available to order
Reference Price (USD)
1+
$1.07000
500+
$1.0593
1000+
$1.0486
1500+
$1.0379
2000+
$1.0272
2500+
$1.0165
Exquisite packaging
Discount
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Harris Corporation presents IRFF223, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IRFF223 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 20W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
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