PJA3409-AU_R1_000A1
Panjit International Inc.
Panjit International Inc.
SOT-23, MOSFET
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with PJA3409-AU_R1_000A1 by Panjit International Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, PJA3409-AU_R1_000A1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
SI7884BDP-T1-GE3
Toshiba Semiconductor and Storage
SSM3J331R,LF
Micro Commercial Co
SI2101A-TP
Renesas Electronics America Inc
UPA2710GR-E2-A
Taiwan Semiconductor Corporation
TSM085P03CV RGG
Alpha & Omega Semiconductor Inc.
AOTF12N30
Diodes Incorporated
ZXMN6A08GQTA
Infineon Technologies
IPD50N03S4L06ATMA1
onsemi
NTRV4101PT1G
Fairchild Semiconductor