IRFD322
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$1.56
Available to order
Reference Price (USD)
1+
$1.56000
500+
$1.5444
1000+
$1.5288
1500+
$1.5132
2000+
$1.4976
2500+
$1.482
Exquisite packaging
Discount
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IRFD322 by Harris Corporation is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRFD322 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: 4-DIP, Hexdip
- Package / Case: 4-DIP (0.300", 7.62mm)
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