UPA1740TP-E1-AZ
Renesas
Renesas
UPA1740TP-E1-AZ - MOS FIELD EFFE
$1.59
Available to order
Reference Price (USD)
1+
$1.59122
500+
$1.5753078
1000+
$1.5593956
1500+
$1.5434834
2000+
$1.5275712
2500+
$1.511659
Exquisite packaging
Discount
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Discover UPA1740TP-E1-AZ, a versatile Transistors - FETs, MOSFETs - Single solution from Renesas, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 440mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 22W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)
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