IRFBE30LPBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 4.1A I2PAK
$2.99
Available to order
Reference Price (USD)
1+
$3.23000
10+
$2.92600
100+
$2.36900
500+
$1.86300
1,000+
$1.55940
3,000+
$1.45820
5,000+
$1.40760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IRFBE30LPBF, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IRFBE30LPBF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
2SK4098LS
Taiwan Semiconductor Corporation
TSM4ND65CI
Diodes Incorporated
DMP10H4D2S-13
Microchip Technology
APT22F120B2
Infineon Technologies
IPP17N25S3100AKSA1
Vishay Siliconix
IRFI620GPBF
Micro Commercial Co
MCAC30N06Y-TP
Fairchild Semiconductor
FDFC3N108
Nexperia USA Inc.
PSMN1R5-25MLHX
Toshiba Semiconductor and Storage