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IRF9Z10PBF-BE3

Vishay Siliconix
IRF9Z10PBF-BE3 Preview
Vishay Siliconix
MOSFET P-CH 60V 6.7A TO220AB
$1.70
Available to order
Reference Price (USD)
1+
$1.70000
500+
$1.683
1000+
$1.666
1500+
$1.649
2000+
$1.632
2500+
$1.615
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

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