IPD50N06S4L12ATMA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 50A TO252-31
$1.30
Available to order
Reference Price (USD)
2,500+
$0.34994
5,000+
$0.32581
12,500+
$0.31374
25,000+
$0.30716
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPD50N06S4L12ATMA2, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPD50N06S4L12ATMA2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPU50R2K0CEBKMA1
onsemi
FDA33N25
Rohm Semiconductor
RAQ045P01TCR
Taiwan Semiconductor Corporation
TSM2NB60CP ROG
onsemi
RFD12N06RLESM9A
Panjit International Inc.
PJS6413_S1_00001
Fairchild Semiconductor
SFR9014TF
IXYS
IXTH20N65X2
Vishay Siliconix
SIHA11N80E-GE3
Microchip Technology