IRF7606TR
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 3.6A MICRO8
$0.79
Available to order
Reference Price (USD)
1+
$0.79000
500+
$0.7821
1000+
$0.7742
1500+
$0.7663
2000+
$0.7584
2500+
$0.7505
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IRF7606TR by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IRF7606TR ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Micro8™
- Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Related Products
STMicroelectronics
STW21NM60ND
Vishay Siliconix
IRF740SPBF
IXYS
IXTP76P10T
Nexperia USA Inc.
PMBF170,235
STMicroelectronics
STN3P6F6
Fairchild Semiconductor
FDD5N50FTM
Toshiba Semiconductor and Storage
TPH2R408QM,L1Q
onsemi
FDS5351
Infineon Technologies
IPI111N15N3GAKSA1
Diodes Incorporated