ZXMN0545G4TA
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 450V 140MA SOT-223
$1.30
Available to order
Reference Price (USD)
1,000+
$0.51975
2,000+
$0.48510
5,000+
$0.46085
10,000+
$0.44352
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
ZXMN0545G4TA by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, ZXMN0545G4TA ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450 V
- Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
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