IRF6618TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
$3.05
Available to order
Reference Price (USD)
4,800+
$0.97526
9,600+
$0.95480
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IRF6618TRPBF, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ MT
- Package / Case: DirectFET™ Isometric MT
Related Products
Vishay Siliconix
SI7738DP-T1-GE3
Infineon Technologies
IRF3710ZPBF
Vishay Siliconix
SI4464DY-T1-GE3
Infineon Technologies
IPS80R2K4P7AKMA1
Microchip Technology
VN10KN3-G-P014
Vishay Siliconix
SUP53P06-20-E3
IXYS
IXFA180N10T2
NTE Electronics, Inc
NTE454
Fairchild Semiconductor
HUF76131SK8T
Harris Corporation