RFL4N15
Harris Corporation
Harris Corporation
SMALL SIGNAL N-CHANNEL MOSFET
$1.02
Available to order
Reference Price (USD)
1+
$1.02000
500+
$1.0098
1000+
$0.9996
1500+
$0.9894
2000+
$0.9792
2500+
$0.969
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover RFL4N15, a versatile Transistors - FETs, MOSFETs - Single solution from Harris Corporation, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 400mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 8.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-205AF (TO-39)
- Package / Case: TO-205AF Metal Can
Related Products
Rohm Semiconductor
R6515ENJTL
Nexperia USA Inc.
PHB191NQ06LT,118
Fairchild Semiconductor
HUF76121S3S
Vishay Siliconix
SQ1470AEH-T1_GE3
Panjit International Inc.
PJQ5462A-AU_R2_000A1
Toshiba Semiconductor and Storage
TK1K7A60F,S4X
onsemi
FCPF260N65FL1-F154
Infineon Technologies
IRLU3636PBF
IXYS
IXTP3N100D2
Alpha & Omega Semiconductor Inc.