IRF40H233ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 35A 8PQFN
$0.88
Available to order
Reference Price (USD)
1+
$0.88000
500+
$0.8712
1000+
$0.8624
1500+
$0.8536
2000+
$0.8448
2500+
$0.836
Exquisite packaging
Discount
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Enhance your electronic applications with Infineon Technologies s IRF40H233ATMA1, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of IRF40H233ATMA1 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
- Power - Max: 3.8W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-4
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