BLA6H1011-600
NXP USA Inc.
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
$624.04
Available to order
Reference Price (USD)
1+
$624.04000
500+
$617.7996
1000+
$611.5592
1500+
$605.3188
2000+
$599.0784
2500+
$592.838
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your project s performance with NXP USA Inc. s BLA6H1011-600, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, BLA6H1011-600 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of BLA6H1011-600.
Specifications
- Product Status: Active
- FET Type: -
- FET Feature: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Analog Devices Inc./Maxim Integrated
MAX8783GTC+T
onsemi
2SK3436-TL-E-ON
Renesas
UPA1770G-E1-A
Rohm Semiconductor
SP8K22HZGTB
Rohm Semiconductor
SP8K2HZGTB
Diodes Incorporated
DMN16M9UCA6-7
Renesas Electronics America Inc
FS50KM-2-J2#E52
Diodes Incorporated
DMN13M9UCA6-7
Fairchild Semiconductor
FDML7610AS
Diodes Incorporated