P3M12080K3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 47A TO-247-3
$11.90
Available to order
Reference Price (USD)
1+
$11.90000
500+
$11.781
1000+
$11.662
1500+
$11.543
2000+
$11.424
2500+
$11.305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with P3M12080K3, a high-quality Transistors - FETs, MOSFETs - Single from PN Junction Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, P3M12080K3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 47A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +21V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 221W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3
Related Products
IXYS
IXFH96N15P
Vishay Siliconix
SUM40010EL-GE3
STMicroelectronics
STU6N65M2
Texas Instruments
CSD17579Q5A
Vishay Siliconix
SIHF520STRL-GE3
Infineon Technologies
IPD040N03LGATMA1
Panjit International Inc.
PJD2NA1K_L2_00001
onsemi
FCPF400N60
Vishay Siliconix
SIHL620STRL-GE3
STMicroelectronics