IPZA60R045P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 61A TO247-4-3
$9.09
Available to order
Reference Price (USD)
1+
$9.08821
500+
$8.9973279
1000+
$8.9064458
1500+
$8.8155637
2000+
$8.7246816
2500+
$8.6337995
Exquisite packaging
Discount
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Optimize your electronic systems with IPZA60R045P7XKSA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPZA60R045P7XKSA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.08mA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3891 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 201W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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Infineon Technologies