IPWS65R022CFD7AXKSA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE_COOLMOS PG-TO247-3
$25.41
Available to order
Reference Price (USD)
1+
$25.40579
500+
$25.1517321
1000+
$24.8976742
1500+
$24.6436163
2000+
$24.3895584
2500+
$24.1355005
Exquisite packaging
Discount
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IPWS65R022CFD7AXKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPWS65R022CFD7AXKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
- Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-31
- Package / Case: TO-247-3
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