FDV304P-F169
onsemi
onsemi
P-CHANNEL DIGITAL FET
$0.14
Available to order
Reference Price (USD)
1+
$0.14000
500+
$0.1386
1000+
$0.1372
1500+
$0.1358
2000+
$0.1344
2500+
$0.133
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover FDV304P-F169, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 460mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
- Vgs (Max): -8V
- Input Capacitance (Ciss) (Max) @ Vds: 63 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Renesas Electronics America Inc
RJK0358DPA-WS#J0
IXYS
IXTP76N25TM
onsemi
NTMFS4C760NT1G
Renesas Electronics America Inc
UPA2450BTL(3)-E1-A
onsemi
MCH3420-TL-E
Diodes Incorporated
DMN3027LFG-13
Vishay Siliconix
SIB422EDK-T4-GE3
Sanyo
5LN01SS-TL-E
Diodes Incorporated
DMN6069SFVW-13
Panjit International Inc.