IPW65R022CFD7AXKSA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE_COOLMOS PG-TO247-3
$25.39
Available to order
Reference Price (USD)
1+
$25.38721
500+
$25.1333379
1000+
$24.8794658
1500+
$24.6255937
2000+
$24.3717216
2500+
$24.1178495
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPW65R022CFD7AXKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPW65R022CFD7AXKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
- Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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