IPW60R280E6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 13.8A TO247-3
$3.19
Available to order
Reference Price (USD)
240+
$2.54433
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPW60R280E6FKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPW60R280E6FKSA1 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SUP70042E-GE3
Microchip Technology
APT20M45BVFRG
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2305B-F2-0000HF
Infineon Technologies
IPL60R104C7AUMA1
Vishay Siliconix
SI7112DN-T1-GE3
Rohm Semiconductor
R6511KNXC7G
onsemi
BSS138
Vishay Siliconix
SUG90090E-GE3
Rectron USA
RM20N650T2
STMicroelectronics