IPU80R600P7AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 8A TO251-3
$1.24
Available to order
Reference Price (USD)
1+
$1.86000
10+
$1.64600
100+
$1.30110
500+
$1.00906
1,000+
$0.79662
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPU80R600P7AKMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPU80R600P7AKMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Nexperia USA Inc.
PMPB33XP,115
onsemi
NTHS5404T1G
IXYS
IXTP60N20X4
Sanyo
NTMFS4C50NT1G
Vishay Siliconix
SI1013R-T1-GE3
Vishay Siliconix
IRFR320PBF
STMicroelectronics
STH410N4F7-6AG
Microchip Technology
APT8065SVRG
Nexperia USA Inc.
PXP400-100QSJ
Vishay Siliconix