STH410N4F7-6AG
STMicroelectronics
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
$7.28
Available to order
Reference Price (USD)
1,000+
$2.92600
2,000+
$2.77970
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with STH410N4F7-6AG, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust STH410N4F7-6AG for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 365W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-6
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
Microchip Technology
APT8065SVRG
Nexperia USA Inc.
PXP400-100QSJ
Vishay Siliconix
IRFD9220PBF
onsemi
FQP3N60C
Fairchild Semiconductor
FDS6688AS
Vishay Siliconix
SIHA14N60E-GE3
onsemi
FDPF33N25T
Infineon Technologies
SPD03N60S5BTMA1
Nexperia USA Inc.
PSMN3R0-60BS,118
IXYS