IPTG210N25NM3FDATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-HSOG-8
$10.17
Available to order
Reference Price (USD)
1+
$10.17000
500+
$10.0683
1000+
$9.9666
1500+
$9.8649
2000+
$9.7632
2500+
$9.6615
Exquisite packaging
Discount
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Boost your electronic applications with IPTG210N25NM3FDATMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPTG210N25NM3FDATMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta), 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 69A, 10V
- Vgs(th) (Max) @ Id: 4V @ 267µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 125 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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