IMW120R007M1HXKSA1
Infineon Technologies
Infineon Technologies
SIC DISCRETE
$104.45
Available to order
Reference Price (USD)
1+
$104.45000
500+
$103.4055
1000+
$102.361
1500+
$101.3165
2000+
$100.272
2500+
$99.2275
Exquisite packaging
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Experience the power of IMW120R007M1HXKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IMW120R007M1HXKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V
- Vgs(th) (Max) @ Id: 5.2V @ 47mA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 18 V
- Vgs (Max): +20V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 9170 nF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 750W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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