C3M0120090J
Wolfspeed, Inc.
Wolfspeed, Inc.
SICFET N-CH 900V 22A D2PAK-7
$11.80
Available to order
Reference Price (USD)
1+
$11.80000
500+
$11.682
1000+
$11.564
1500+
$11.446
2000+
$11.328
2500+
$11.21
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of C3M0120090J, a premium Transistors - FETs, MOSFETs - Single from Wolfspeed, Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, C3M0120090J is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 15 V
- Vgs (Max): +18V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 600 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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