IPSA70R2K0P7SAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 3A TO251-3
$0.78
Available to order
Reference Price (USD)
1+
$0.71000
10+
$0.59600
100+
$0.44680
500+
$0.32766
1,000+
$0.25320
Exquisite packaging
Discount
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Discover high-performance IPSA70R2K0P7SAKMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPSA70R2K0P7SAKMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 400 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 17.6W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-347
- Package / Case: TO-251-3 Stub Leads, IPak
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