IPS80R750P7AKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 7A TO251-3
$0.71
Available to order
Reference Price (USD)
1+
$1.60000
10+
$1.41500
100+
$1.11820
500+
$0.86714
1,000+
$0.68459
Exquisite packaging
Discount
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Enhance your circuit performance with IPS80R750P7AKMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPS80R750P7AKMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 51W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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