IPS50R520CP
Infineon Technologies
Infineon Technologies
MOSFET N-CH 550V 7.1A TO251-3
$0.63
Available to order
Reference Price (USD)
1+
$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IPS50R520CP, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPS50R520CP meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 66W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-11
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Vishay Siliconix
SIR5802DP-T1-RE3
Alpha & Omega Semiconductor Inc.
AOD4454
onsemi
NTB23N03R
Nexperia USA Inc.
PMZ370UNEYL
Diodes Incorporated
DMT6017LFDF-7
IXYS
IXTA15N50L2-TRL
Microchip Technology
DN2540N5-G
Vishay Siliconix
SI7230DN-T1-GE3
Fairchild Semiconductor
FDFMA2P853
IXYS