FDFMA2P853
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET P-CH 20V 3A 6MICROFET
$0.34
Available to order
Reference Price (USD)
3,000+
$0.29348
6,000+
$0.27324
15,000+
$0.26312
30,000+
$0.25760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FDFMA2P853, a premium Transistors - FETs, MOSFETs - Single from Fairchild Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDFMA2P853 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-VDFN Exposed Pad
Related Products
IXYS
IXTH36P15P
onsemi
IRF530A
onsemi
NVD4804NT4G
NXP USA Inc.
BUK724R5-30C118
Vishay Siliconix
IRF710PBF
Infineon Technologies
IAUT300N10S5N015ATMA1
Sanyo
5HN01M-TL-E-SA
Alpha & Omega Semiconductor Inc.
AOT600A70FL
Microchip Technology
TN5325N3-G
IXYS