IPP80N06S2L09AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPP80N06S2L09AKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPP80N06S2L09AKSA1 inquire now for more details!
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 2V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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