DMG4N65CT
Diodes Incorporated
Diodes Incorporated
MOSFET N CH 650V 4A TO220-3
$0.00
Available to order
Reference Price (USD)
50+
$1.04960
Exquisite packaging
Discount
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Optimize your electronic systems with DMG4N65CT, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMG4N65CT provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.19W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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