FQI12N60CTU
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 600V 12A I2PAK
$1.01
Available to order
Reference Price (USD)
1+
$1.01000
500+
$0.9999
1000+
$0.9898
1500+
$0.9797
2000+
$0.9696
2500+
$0.9595
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Fairchild Semiconductor presents FQI12N60CTU, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FQI12N60CTU delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
SIR104LDP-T1-RE3
STMicroelectronics
STWA20N95K5
Diodes Incorporated
ZXMN15A27KTC
IXYS
IXTP94N20X4
Fairchild Semiconductor
FQA16N25C
Toshiba Semiconductor and Storage
TPHR9203PL,L1Q
Vishay Siliconix
SUM70030E-GE3
Linear Integrated Systems, Inc.
SST214 SOT-143 4L
STMicroelectronics
STF18N65M2
STMicroelectronics