IPP016N06NF2SAKMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-TO220-3
$4.03
Available to order
Reference Price (USD)
1+
$4.03000
500+
$3.9897
1000+
$3.9494
1500+
$3.9091
2000+
$3.8688
2500+
$3.8285
Exquisite packaging
Discount
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Boost your electronic applications with IPP016N06NF2SAKMA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IPP016N06NF2SAKMA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 186µA
- Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: TO-220-3
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