IPN50R650CEATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 9A SOT223
$1.00
Available to order
Reference Price (USD)
3,000+
$0.31023
6,000+
$0.29112
15,000+
$0.28156
30,000+
$0.27634
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPN50R650CEATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPN50R650CEATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-3
- Package / Case: TO-261-4, TO-261AA
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